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multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors...

technology, despite TSMC developing GAAFET transistors. Specifically, Samsung plans to use its own variant of GAAFET called MBCFET (multi-bridge channel...

channel FET, Samsung's version of GAAFET) "2 nm" process in 2025.[needs update] In April 2022, TSMC announced its GAAFET "N2" process technology would enter...

nanosheets in a gate-all-around configuration (GAAFET), a break from the usual FinFET design. The GAAFET transistors used had 3 nanosheets stacked on top...

comparison, the gate-all-around MOSFET (GAAFET) structure has even better gate control. A gate-all-around MOSFET (GAAFET) was first demonstrated in 1988, by...

transistor (FinFET), source/drain region shapes fins on the silicon surface GAAFET, Similar to FinFET but nanowires are used instead of fins, the nanowires...

Mass Production of 3nm GAAFET Chips in 2021", Tom's Hardware Smith, Ryan. "Samsung Starts 3nm Production: The Gate-All-Around (GAAFET) Era Begins". www.anandtech...

in the 1980s. He also invented the first gate-all-around (GAA) MOSFET (GAAFET) transistor, an early non-planar 3D transistor, in 1988. Masuoka attended...

In 2019, Samsung announced plans for the commercial production of a 3 nm GAAFET process by 2021. FD-SOI (Fully Depleted Silicon On Insulator) has been seen...

More recent or high-performance ICs may instead use multi-gate FinFET or GAAFET transistors instead of planar ones, starting at the 22 nm node (Intel) or...

single-strand DNA molecules to detect matching DNA strands. finFET, including GAAFET or gate-all-around FET, used on high density processor chips The JFET (junction...

Mass Production of 3nm GAAFET Chips in 2021", www.tomshardware.com "Samsung Starts 3nm Production: The Gate-All-Around (GAAFET) Era Begins". AnandTech...

TSMC Maintain Their Process Technology Lead". July 18, 2023. "Samsung 3nm GAAFET Enters Risk Production; Discusses Next-Gen Improvements". July 5, 2022....

Ya-Chi; Chiang, Meng-Hsueh; Wang, Shui-Jinn; Fossum, Jerry G. (March 2017). "GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node". IEEE...

eventual replacement of FinFET, most of which were based on the concept of GAAFET: horizontal and vertical nanowires, horizontal nanosheet transistors (Samsung...

production of the first 5 nm nodes in late 2018, with plans to introduce 3 nm GAAFET nodes by 2021. According to market research firm Gartner, during the second...

follows: Logic chips with non-planar transistor architectures (I.e., FinFET or GAAFET) of 16 nm or 14 nm, or below; DRAM memory chips of 18 nm half-pitch or less;...