Search results
Appearance
There is a page named "Ferroelectric Memory" on Wikipedia
- Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric...25 KB (2,983 words) - 22:07, 11 May 2024
- Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external...32 KB (4,131 words) - 22:13, 2 April 2024
- non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM,...18 KB (1,920 words) - 03:59, 13 June 2024
- Fe FET (redirect from Ferroelectric Field-Effect Transistor)but ferroelectric material was used as a dielectric/insulator instead of oxide. Use of a ferroelectric (triglycine sulfate) in a solid state memory was...6 KB (689 words) - 06:23, 1 June 2023
- electronics as tunable capacitors (varactors). In memory applications, the stored value of a ferroelectric capacitor is read by applying an electric field...3 KB (432 words) - 03:55, 10 May 2023
- alternative application of (hafnium oxide based) ferroelectrics is Fe FET based memory, which utilises a ferroelectric between the gate and device of a field-effect...18 KB (2,392 words) - 16:01, 10 May 2024
- Hafnium(IV) oxide (category Ferroelectric materials)"Imec demonstrates breakthrough in CMOS-compatible Ferroelectric Memory". The Ferroelectric Memory Company (8 June 2017). "World's first FeFET-based 3D...9 KB (843 words) - 00:44, 3 June 2024
- Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data...57 KB (5,724 words) - 15:04, 19 June 2024
- Ferroelectric polymers are a group of crystalline polar polymers that are also ferroelectric, meaning that they maintain a permanent electric polarization...17 KB (2,029 words) - 05:13, 24 June 2024
- temperature near absolute zero. Other inventions were ferroelectric memory, content-addressable memory, non-destructive sensing of magnetic fields, and writing...12 KB (1,400 words) - 20:33, 23 December 2023
- Multiferroics (redirect from Magnetic ferroelectrics)electronic memory devices. A Web of Science search for the term multiferroic yields the year 2000 paper "Why are there so few magnetic ferroelectrics?" from...74 KB (8,490 words) - 21:10, 16 May 2024
- of TCAM using hybrid Ferroelectric FeFET was recently published by a group of International scientists. Content-addressable memory is often used in computer...14 KB (1,603 words) - 05:22, 30 April 2024
- Most of them are associated with nanotechnology, particularly a ferroelectric memory chip (FeRAM) As a professor of electrical and computer engineering...5 KB (456 words) - 18:04, 27 January 2024
- updated. NVRAM (Non-volatile random-access memory) FRAM (Ferroelectric RAM) – One type of nonvolatile RAM. Flash memory – In this type the writing process is...36 KB (3,551 words) - 19:50, 27 December 2023
- paper tape and punched cards. Non-volatile memory technologies under development include ferroelectric RAM, programmable metallization cell, Spin-transfer...29 KB (3,272 words) - 23:26, 8 July 2024
- Allen Buck, inventor of the cryotron, content-addressable memory, and ferroelectric memory Sean Collier, Police officer at MIT, killed by perpetrators...21 KB (2,433 words) - 17:14, 30 June 2024
- August 2015). "Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric" (PDF). Applied Physics Letters...13 KB (1,454 words) - 20:49, 10 May 2024
- Memristor (redirect from Memory resistor)elucidated in an article in nature nanotechnology. The ferroelectric memristor is based on a thin ferroelectric barrier sandwiched between two metallic electrodes...114 KB (13,866 words) - 08:01, 6 June 2024
- calculators Ferroelectric RAM Magnetoresistive random-access memory Read-mostly memory (RMM) Thin-film memory Transfluxor Twistor memory "Computer for...40 KB (5,338 words) - 03:12, 14 June 2024
- Xpoint memory where phase-change alloy is used as a storage part of a memory cell. Ferroelectric RAM (FRAM) Magnetoresistive random-access memory (MRAM)...41 KB (4,672 words) - 16:49, 23 April 2024
- 390 (1999). [30] Jeremy Levy, Quantum-Information Processing with Ferroelectrically Coupled Quantum Dots, Phys. Rev. A 64, 052306 (2001). [31] Austin
- actuators, transducers, and dielectrics for capacitors. Ferroelectric capacitors are important in memory devices (FRAM) and in the tuning circuits of cellular